Chipworks uses an Ion Beam Etcher, or IBE to take layers off a semiconducter by blasting it with atoms in an ion beam. A transmission electron microscope (TEM) is used to examine the pre-processed chips.
● It turns out that the A7′s “gate pitch” — the distance between each transistor — is 114 nm, compared to the A6's 123 nm.
● Looking to improve on their current 32 nm process, Apple decided to make the A7 with the same 28 nm process as the eight-core Samsung Exynos 5410, the current flagship CPU for Samsung’s own Galaxy line.
● The A7 transistor level die photo reveals all one billion plus transistors on a 102 mm2 field.
You can check out the full teardown at the link below...